This is important for the quality and performance of cell phone jammers

 This is important for the quality and performance of cell phone jammers 
8-channel laser amplifier chain arranged in space, technical parameters and the world's most advanced running OMEGA devices. In 2000, SG device 8 roadbed II frequency reached eight trillion watts of power, began trial operation in target practice. In 2000, driven directly by the neutron yield of 4 billion indirectly driven by the neutron yield of 100 million, direct drive shock wave pressure up 1.5TPa indirectly driven shock pressure up to 3.7TPa. In August 2001 the SG Ⅱ device built, the total output energy of 600 kJ / ns, or 8 trillion watts / 100 picoseconds, the overall performance reached the international advanced level of similar devices. "SG II hundreds of optical equipment is integrated in a space the size of a football field. Some information of  cell phone jammers  needs to be added.
SG Ⅱ fired eight laser beams synchronized to within about 150 m of optical path step by step amplification: the caliber of each laser beam from a 5 mm expansion to nearly 240 mm, the output energy from the dozens of micro-joules to 750 joules / beam. 8 beam of intense laser through the space of three-dimensional arrangement of the amplifier chain gathered in a small fuel target ball, emits the equivalent of a strong power of the global sum of the grid electricity several times in the billionth of a second ultrashort moment , thus releasing the extreme pressure and high temperature, irradiated glass spherical shell filled with thermonuclear fuel gas, the rapid compression fuel gas, making it an instant to achieve high density and temperature, in order to trigger thermonuclear fusion. SG-II has been achieved all-optical automatic alignment value positioning.  cell phone jammers  can be built inside the enterprise.
Experiment to correct the minimal deviation of the instrument due to vibration and temperature changes, so that the output laser accurate by focusing through a small hole of about 0.3 mm, only a little thicker than a hair. Determine the performance of ultrashort laser system there are two important indicators: First, the time scale, the second is the output power. In April 2004, SG Ⅱ device 100 trillion watts mark output peak power of 120 trillion / 36 femtoseconds. At present, only a few developed countries in the international well-known experimental titanium sapphire laser device output power of over 100 trillion watts. This means that God means that God trillionth of 36 seconds ultrashort moment within the light II in 1000 trillionth of a second ultra-short moment.
An important condition for the formation of laser, population inversion, is the particle number density of the conduction band is greater than the valence band (semiconductor) or the energy level of the particle number density is greater than the low-energy level (gas or solid), the phenomenon of the laser is in such a deviation from the steady state of equilibrium. Compared to solid-state lasers and gas lasers, the semiconductor laser structure is very different. Semiconductor laser three-tier or multi-layer heterojunction structure, constitute the optical constraints such as the refractive index within Minor natural heterostructure quantum well structure (the first semiconductor laser is not a quantum well structure with the MBE semiconductor processing technology, a single well and multi-well structure can be achieved).